Structural and optical properties of high-quality ZnTe grown on GaAs using ZnSe ZnTe strained-layer superlattices buffer layer

This work studied the structural and optical properties of ZnTe epilayers grown on GaAs substrates with ZnSe/ZnTe strained-layer superlattices buffer layers. Photoluminescence spectra clearly distinguished the strong free exciton peaks, weak donor-acceptor pair, Y lines, and oxygen-bound exciton peaks, indicating the high quality of the films. In addition, the contactless electroreflectance and piezoreflectance spectra were compared to ascertain that ZnTe epilayers of 1.5 mu m thickness grown on GaAs substrates are under a biaxial tensile strain. (C) 1999 Elsevier Science B.V. All rights reserved.