The effect of grain boundary characteristics on the morphology of the crystal/melt interface of multicrystalline silicon

被引:27
|
作者
Fujiwara, Kozo [1 ]
Ishii, Masaya [1 ]
Maeda, Kensaku [1 ]
Koizumi, Haruhiko [1 ]
Nozawa, Jun [1 ]
Uda, Satoshi [1 ]
机构
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
关键词
Crystal/melt interface; Grain boundary character; Solidification; Impurity Segregation; GROWTH; DENDRITES; MECHANISM;
D O I
10.1016/j.scriptamat.2013.04.015
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effect of grain boundary characteristics on the crystal/melt interface morphology during the unidirectional solidification of multicrystalline Si was studied by in situ observations. It was shown that sharp and smooth grooves were formed at the crystal/melt interfaces at Sigma 27 and random grain boundaries, whereas no grooves were formed at Sigma 3 {1 1 1} twin boundaries. We explain the reasons why the grooves form at grain boundaries and discuss the impurity segregation at the grain boundary grooves on the crystal/melt interface. (c) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:266 / 269
页数:4
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