Radiation damage induced by swift heavy ions in TiO2 sol-gel films nanocrystallines

被引:18
作者
Hazem, R. [1 ]
Izerrouken, M. [2 ]
Sari, A. [3 ]
Kermadi, S. [4 ]
Msimanga, M. [5 ]
Benyagoub, A. [6 ]
Maaza, M. [7 ]
Belgaid, M. [1 ]
Boumaour, M. [4 ]
机构
[1] USTHB, Fac Phys, Algiers, Algeria
[2] Ctr Rech Nucl Draria, Algiers, Algeria
[3] Ctr Rech Nucl Birine, Ain Oussara, Djelfa, Algeria
[4] UDTS, Algiers, Algeria
[5] NRF iThemba LABS, ZA-2050 Johannesburg, South Africa
[6] Univ Caen Basse Normandie, CNRS, CEA, ENSICAEN,CIMAP,Ex CIRIL,GANIL, F-14070 Caen 5, France
[7] iThemba LABS, ZA-7129 Somerset West, Cap Town, South Africa
关键词
Semiconductors; Radiation damage; Optical properties; Defects; Photocatalytic; Nanostructure; THIN-FILMS; PHOTOCATALYTIC ACTIVITY; TITANIUM-DIOXIDE; SCANNING FORCE; ANATASE; TRACKS; IMPLANTATION; CAF2;
D O I
10.1016/j.nimb.2013.03.037
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
TiO2 films prepared by sol-gel were irradiated with 25.8 MeV Cu and 90 MeV Xe ions at room temperature under normal incidence. The irradiation with Cu and Xe ions were performed respectively at iThemba labs, South Africa and GANIL, Caen, France. The properties of radiation defects induced in TiO2 nanostructures were investigated using grazing angle X-ray diffraction (GAXRD), atomic force microscopy (AFM) and UV-visible spectrophotometry. From GAXRD analysis, it is found that anatase (1 0 1) peak intensity decrease with increasing the fluence and disappear completely above a threshold ion fluence of 5 x 10(12) ion/cm(2). This indicates that the crystallinity of the TiO2 film is destroyed upon irradiation due to the amorphous track formation. The track radius estimated from the Poisson's law is about 2 and 4 nm after irradiation with 25.8 MeV Cu and 90 MeV Xe ions, respectively. According to the AFM analysis, the elaborated TiO2 films are composed of particles with a triangular shape of a size in the range of 200-500 nm. It is found that the particle size increases after irradiation with both Cu and Xe ions. In addition, the root-mean-square (RMS) surface roughness for 780 nm x 780 nm area scans decreases exponentially with increasing fluence up to 10(13) ions/cm(2) in the case of Xe irradiation, but increases drastically above 2.68 x 10(11) ions/cm(2) in the case of Cu ion irradiation and reaches a mean value of similar to 3 nm. The absorption measurements reveal that the optical band gap is not affected by both Xe and Cu ions irradiation. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:16 / 22
页数:7
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