Effect of thermal annealing on the optical and structural properties of silicon implanted with a high hydrogen fluence

被引：1

作者：

Kling, A

Soares, JC

Rodríguez, A

Rodríguez, T

Avella, M

Jiménez, J

机构：

[1] Inst Tecnol & Nucl, P-2686953 Sacavem, Portugal

[2] Univ Lisbon, Ctr Fis Nucl, P-1649003 Lisbon, Portugal

[3] Univ Politecn Madrid, ETSI Telecomun, Dept Tecnol Electron, Madrid 28040, Spain

[4] Univ Valladolid, Dept Fis Mat Condensada, Valladolid 47011, Spain

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2006年 / 242卷 / 1-2期

关键词：

ion implantation; elastic recoil detection; cathodoluminescence; UV/VIS reflection;

D O I：

10.1016/j.nimb.2005.08.087

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Silicon capped by thermal oxide has been implanted with 1 x 10(17) H/cm(2) and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality and light emission. The results show that the luminescent properties are independent of the hydrogen content but are strongly related with the present damage. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：650 / 652

页数：3

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