Recent Progress of Photodetectors based on MX2/Graphene van der Waals heterostructures

被引：0

作者：

Yang, Hang ^{[1
]}

Qin, Shiqiao ^{[2
]}

Fang, Jinyue ^{[1
]}

Peng, Gang ^{[1
]}

Zhang, Xueao ^{[1
]}

机构：

[1] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China

[2] Natl Univ Def Technol, Coll Optoelect Sci & Engn, Changsha 410073, Hunan, Peoples R China

来源：

OPTICAL MEASUREMENT TECHNOLOGY AND INSTRUMENTATION | 2016年 / 10155卷

关键词：

photodetectors; two-dimensional materials; graphene; MX2; heterostructures; BROAD-BAND; PHOTOCURRENT GENERATION; GRAPHENE PLASMONICS; HIGH RESPONSIVITY; LIGHT; DIODES; MOS2; PHOTONICS; EMISSION; GROWTH;

D O I：

10.1117/12.2243415

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Recently, heterostructures, combining the unique advantages of both graphene and transition metal dichalcogenides (TMDs, also known as MX2), have exhibited extraordinary photo-electrical properties, thus attracted tremendous interests worldwide. In this paper, we overviewed recent progress of MX2/Graphene van der Waals heterostructures, including the preparation methods, relevant parameters in opto-electronic measurements, physical mechanisms, existing experimental results and encountered problems. Here, we focus to cover the development of entire field, and provide a comprehensive and accurate understanding concerning this field, which may be helpful for interested researchers in this area.

引用

页数：11

共 69 条

[1] Graphene Photonics, Plasmonics, and Broadband Optoelectronic Devices [J].

Bao, Qiaoliang ;

Loh, Kian Ping .

ACS NANO, 2012, 6 (05) :3677-3694

[2]

Baugher BWH, 2014, NAT NANOTECHNOL, V9, P262, DOI [10.1038/NNANO.2014.25, 10.1038/nnano.2014.25]

[3] Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures [J].

Bertolazzi, Simone ;

Krasnozhon, Daria ;

Kis, Andras .

ACS NANO, 2013, 7 (04) :3246-3252

[4]

Bonaccorso F, 2010, NAT PHOTONICS, V4, P611, DOI [10.1038/NPHOTON.2010.186, 10.1038/nphoton.2010.186]

[5] Ultrafast collinear scattering and carrier multiplication in graphene [J].

Brida, D. ;

Tomadin, A. ;

Manzoni, C. ;

Kim, Y. J. ;

Lombardo, A. ;

Milana, S. ;

Nair, R. R. ;

Novoselov, K. S. ;

Ferrari, A. C. ;

Cerullo, G. ;

Polini, M. .

NATURE COMMUNICATIONS, 2013, 4

[6] Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films [J].

Britnell, L. ;

Ribeiro, R. M. ;

Eckmann, A. ;

Jalil, R. ;

Belle, B. D. ;

Mishchenko, A. ;

Kim, Y. -J. ;

Gorbachev, R. V. ;

Georgiou, T. ;

Morozov, S. V. ;

Grigorenko, A. N. ;

Geim, A. K. ;

Casiraghi, C. ;

Castro Neto, A. H. ;

Novoselov, K. S. .

SCIENCE, 2013, 340 (6138) :1311-1314

[7] Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures [J].

Britnell, L. ;

Gorbachev, R. V. ;

Jalil, R. ;

Belle, B. D. ;

Schedin, F. ;

Mishchenko, A. ;

Georgiou, T. ;

Katsnelson, M. I. ;

Eaves, L. ;

Morozov, S. V. ;

Peres, N. M. R. ;

Leist, J. ;

Geim, A. K. ;

Novoselov, K. S. ;

Ponomarenko, L. A. .

SCIENCE, 2012, 335 (6071) :947-950

[8]

Castellanos-Gomez A, 2013, 2D MAT, V1

[9] MoS2/Graphene Cocatalyst for Efficient Photocatalytic H2 Evolution under Visible Light Irradiation [J].

Chang, Kun ;

Mei, Zongwei ;

Wang, Tao ;

Kang, Qing ;

Ouyang, Shuxin ;

Ye, Jinhua .

ACS NANO, 2014, 8 (07) :7078-7087

[10] Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p-n Diodes [J].

Cheng, Rui ;

Li, Dehui ;

Zhou, Hailong ;

Wang, Chen ;

Yin, Anxiang ;

Jiang, Shan ;

Liu, Yuan ;

Chen, Yu ;

Huang, Yu ;

Duan, Xiangfeng .

NANO LETTERS, 2014, 14 (10) :5590-5597

← 1 2 3 4 5 6 7 →