Improved detection of the invisible

被引：34

作者：

Carrano, JC ^{[1
]}

Li, T ^{[1
]}

Grudowski, PA ^{[1
]}

Dupuis, RD ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] US Mil Acad, West Point, NY 10996 USA

来源：

IEEE CIRCUITS & DEVICES | 1999年 / 15卷 / 05期

关键词：

D O I：

10.1109/101.795089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For decades, sensing and imaging in the infrared (IR) portion of the electromagnetic spectrum has been commonplace and cost-effective, owing largely to tremendous advances in semiconductor materials and optoelectronic devices that were designed to detect light at these wavelengths. Less well known is the fact that the ultraviolet (UV) portion of the spectrum is widely used for a variety of sensing and imaging applications. However, until very recently, with the advent of wide-bandgap materials such as AlGaN, there have not been high-performance optoelectronic devices designed for optimal operation in the UV range. Thus, the development of sophisticated detection applications in the UV range has been limited by the existing technology. This article outlines recent advances in the development of high-quality UV photodetectors fabricated on GaN and AlGaN. Several specific device structures and their performance characteristics are also presented.

引用

页码：15 / 24

页数：10

共 12 条

[1] Performance of thin separate absorption, charge, and multiplication avalanche photodiodes [J].