Atomic layer deposition of thin oxide films for resistive switching

被引：5

作者：

Froehlich, K. ^{[1
]}

Jancovic, P.

Hudec, B. ^{[1
]}

Derer, J.

Paskaleva, A. ^{[2
]}

Bertaud, T. ^{[3
]}

Schroeder, T. ^{[3
,4
]}

机构：

[1] SAS, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia

[2] BAS, Inst Solid State Phys, BG-1784 Sofia, Bulgaria

[3] IHP, D-15236 Frankfurt, Germany

[4] BTU, D-03046 Cottbus, Germany

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 9 | 2013年 / 58卷 / 10期

关键词：

D O I：

10.1149/05810.0163ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Atomic layer deposition was used for preparation of TiO2 and HfO2 thin films for resistive switching in metal-insulator-metal structures with Pt and TiN top and bottom electrodes, respectively. To obtain stable bipolar resistive switching loops in TiO2-based structures Al2O3 barrier with the thickness of 3 - 5 nm was necessary. HfO2-based structures with the insulator thickness less than 10 nm exhibited stable bipolar resistive switching. Ratio between high resistivity and low resistivity state varied between 20 and 100 depending on structure preparation and composition as well as on parameters of DC current - voltage measurement. Resistive switching effect was demonstrated in metal-insulator-metal structures with HfO2 layers thickness below 3 nm.

引用

页码：163 / 170

页数：8

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