Driver Topologies for RF Doherty Power Amplifiers

被引:5
作者
Saad, Paul [1 ]
Asghari, Zahra [2 ]
Fager, Christian [2 ]
Nemati, Hossein Mashad [1 ]
机构
[1] Ericsson AB, Radio Design Ctr, Gothenburg, Sweden
[2] Chalmers, Dept Microtechnol & Nanosci, Gothenburg, Sweden
关键词
Doherty power amplifier; driver amplifier; GaN-HEMT; two-stage power amplifier; PREDISTORTION;
D O I
10.1109/LMWC.2016.2629977
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this letter, class-B, embedded class-B, and Doherty driver topologies are investigated for RF Doherty Power Amplifiers (PAs). The investigation is firstly conducted theoretically and by simulations and then verified by design and implementation of the different topologies at 2.1 GHz using GaN-HEMT transistors. The results show that the highest lineup efficiency can be achieved when using a Doherty driver. Modulated measurements using the same LTE signal and the same digital per-distorter (DPD), show about 2% and 4% higher average lineup efficiency when the Doherty driver is used compared to the class-B and embedded class-B drivers, respectively.
引用
收藏
页码:67 / 69
页数:3
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