A mechanism for the removal of dislocations in SOI compliant substrate systems

被引：0

作者：

Kukta, RV ^{[1
]}

Freund, LB ^{[1
]}

机构：

[1] CALTECH, Div Engn & Appl Sci, Pasadena, CA 91125 USA

来源：

III-V AND IV-IV MATERIALS AND PROCESSING CHALLENGES FOR HIGHLY INTEGRATED MICROELECTRONICS AND OPTOELECTRONICS | 1999年 / 535卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is demonstrated that the time required for strain transference during the postgrowth anneal of a SOI compliant substrate system is much too long to explain the observed reduction in dislocation density in the resulting microstructure. A mechanism by which misfit dislocation segments are drawn out of the system through viscous dissipation in the bonding layer is proposed and demonstrated to be consistent with observation. The mechanism is modeled in the context of elastic dislocation theory and Linear viscoelasticity.

引用

页码：3 / 8

页数：6

共 14 条

[1]

ALEXANDER H, 1986, DISLOCATIONS SOLIDS, V7, P115

[2] Strain accommodation in mismatched layers by molecular beam epitaxy: Introduction of a new compliant substrate technology [J].