C2 and CN dynamics and pulsed laser deposition of CNx films

被引:9
作者
Kushwaha, Archana [1 ]
Mohanta, Antaryami [1 ]
Thareja, Raj K. [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
关键词
atomic force microscopy; carbon; carbon compounds; doping; laser ablation; nitrogen; plasma materials processing; pulsed laser deposition; Raman spectra; thin films; time resolved spectra; X-ray diffraction; THIN-FILMS; AMBIENT NITROGEN; ALUMINUM PLASMA; ABLATION; GRAPHITE; GROWTH; OXYGEN; PLUME; PHOTOGRAPHY; DIAGNOSTICS;
D O I
10.1063/1.3078078
中图分类号
O59 [应用物理学];
学科分类号
摘要
The time-resolved optical emission studies of laser ablated carbon plasma in nitrogen ambient are carried out to understand the dynamic of formation of C-2 and CN for depositing quality thin films. An optimum formation of C-2 is observed at 3 mm from the target surface and 350 ns after the initiation of plasma. However, CN is formed at comparatively larger distance, 4 mm, and larger delay (850 ns). The expanding plasma plume splits/bifurcates into slow and fast moving two distinct components, with the faster components further splitting up at later times (>350 ns) into two components. The estimated plume front velocity from plume imaging in the nitrogen ambient of 1.2 mbars at a delay of 100 ns is 3.8x10(6) cm/s, consistent with spectroscopic measurement similar to 3.0x10(6) cm/s. The CNx thin films deposited by pulsed laser deposition technique are characterized by x-ray diffraction, atomic force microscopy, and Raman spectroscopy. The high I-D/I-G ratio and peak position shift of G band to lower values in the films deposited for longer time indicates the high incorporation of nitrogen and increasing CN concentration within the film.
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页数:5
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