Dependence of the device performance on the number of stages in quantum-cascade lasers

被引:88
作者
Gmachl, C [1 ]
Capasso, F [1 ]
Tredicucci, A [1 ]
Sivco, DL [1 ]
Köhler, R [1 ]
Hutchinson, AL [1 ]
Cho, AY [1 ]
机构
[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
关键词
injection lasers; intersubband lasers; mid-infrared; unipolar lasers;
D O I
10.1109/2944.788454
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The cascading scheme is a characteristic feature of quantum cascade (QC) lasers. It implies that electrons above threshold generate one photon per active region they successively traverse, This paper presents a study of the cascading behavior as a function of the number N of stacked active regions. Experimental results are presented for devices with N = 1, 3, 6, 12, 20, 30, 45, 60, and 75 active stages. The highest optical power and lowest threshold current density are obtained for laser devices with N as high as possible. However, the lowest threshold voltage and the lowest dissipated power at laser threshold are achieved for N = 3 and N = 22, respectively. We further present the highest power QC lasers so far, which, using N = 75 stages, show in pulsed mode peak powers of 1.4, 1.1, and 0.54 W at 50 K, 200 K, and room temperature, respectively, Finally, we also demonstrate the first few-stage (N < 10) QC lasers. These QC lasers show strongly reduced operating voltages. A threshold voltage around 1.5 V is achieved for N = 3. This makes the lasers very well compliant with conventional laser diode drivers, which in turn mill simplify their immediate use in systems and applications.
引用
收藏
页码:808 / 816
页数:9
相关论文
共 23 条
[1]   BANDGAP ENGINEERING OF SEMICONDUCTOR HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY - PHYSICS AND APPLICATIONS [J].
CAPASSO, F ;
CHO, AY .
SURFACE SCIENCE, 1994, 299 (1-3) :878-891
[2]   Infrared (4-11 mu m) quantum cascade lasers [J].
Capasso, F ;
Faist, J ;
Sirtori, C ;
Cho, AY .
SOLID STATE COMMUNICATIONS, 1997, 102 (2-3) :231-236
[3]   BAND-GAP ENGINEERING - FROM PHYSICS AND MATERIALS TO NEW SEMICONDUCTOR-DEVICES [J].
CAPASSO, F .
SCIENCE, 1987, 235 (4785) :172-176
[4]  
CASEY HC, 1978, HETEROSTRUCTURE LA A
[5]   PHONON LIMITED INTERSUBBAND LIFETIMES AND LINEWIDTHS IN A 2-DIMENSIONAL ELECTRON-GAS [J].
FAIST, J ;
SIRTORI, C ;
CAPASSO, F ;
PFEIFFER, L ;
WEST, KW .
APPLIED PHYSICS LETTERS, 1994, 64 (07) :872-874
[6]   High-power continuous-wave quantum cascade lasers [J].
Faist, J ;
Tredicucci, A ;
Capasso, F ;
Sirtori, C ;
Sivco, DL ;
Baillargeon, JN ;
Hutchinson, AL ;
Cho, AY .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (02) :336-343
[7]   High power mid-infrared (lambda greater than or similar to-5 mu m) quantum cascade lasers operating above room temperature [J].
Faist, J ;
Capasso, F ;
Sirtori, C ;
Sivco, DL ;
Baillargeon, JN ;
Hutchinson, AL ;
Chu, SNG ;
Cho, AY .
APPLIED PHYSICS LETTERS, 1996, 68 (26) :3680-3682
[8]   Epitaxially stacked lasers with Esaki junctions: A bipolar cascade laser [J].
Garcia, JC ;
Rosencher, E ;
Collot, P ;
Laurent, N ;
Guyaux, JL ;
Vinter, B ;
Nagle, J .
APPLIED PHYSICS LETTERS, 1997, 71 (26) :3752-3754
[9]   Theory of the spectral line shape and gain in quantum wells with intersubband transitions [J].
Gelmont, B ;
Gorfinkel, V ;
Luryi, S .
APPLIED PHYSICS LETTERS, 1996, 68 (16) :2171-2173
[10]   Noncascaded intersubband injection lasers at λ≈7.7 μm [J].
Gmachl, C ;
Capasso, F ;
Tredicucci, A ;
Sivco, DL ;
Hutchinson, AL ;
Chu, SNG ;
Cho, AY .
APPLIED PHYSICS LETTERS, 1998, 73 (26) :3830-3832