comparative study of the emitter formation of a c-si solar cell using gas and spin on dopant sources.

被引：0

作者：

Martinez, Jesus ^{[1
]}

Moreno, Mario ^{[1
]}

Rosales, Pedro ^{[1
]}

Torres, Alfonso ^{[1
]}

Murias, Dulce ^{[1
]}

Ambrosio, Roberto ^{[2
]}

机构：

[1] Natl Inst Astrophys Opt & Elect, Elect, Puebla, Mexico

[2] Meritorious Univ Autonomous Puebla, Fac Elect Sci, Puebla, Mexico

来源：

2017 14TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTING SCIENCE AND AUTOMATIC CONTROL (CCE) | 2017年

关键词：

Solar cell; texturization; SOD; junction depth; efficiency;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, a comparative study for the n-type emitter formation in the fabrication of simple structures of crystalline silicon (c-Si) solar cells is reported. Gas and spin on dopant sources were employed in the pn junction formation of the solar cells in order to compare their performance. Phosphine (PH3) was used as n-type gas for phosphorus diffusion while the Filmtronics Spin-On Dopant SOD-P905 was used as n-type liquid source. From the results, we observed that there was a small discrepancy in the open circuit voltage, short circuit current and fill factor of the two processes, with similar efficiency. These results suggest that SOD-P905 can be used to produce low-cost silicon solar cells. Also in order to improve the efficiency of the SOD solar cells, a wet surface texturization stage was incorporated in the fabrication process.

引用

页数：5

共 12 条

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