Simulation of hydrogenated amorphous and microcrystalline silicon optoelectronic devices

被引:45
作者
Fantoni, A [1 ]
Vieira, M
Martins, R
机构
[1] Univ Nova Lisboa, Fac Ciencias & Tecnol, Uninova, P-2825 Monte De Caparica, Portugal
[2] ISEL, P-1900 Lisbon, Portugal
关键词
optoelectronics; semiconductor device simulation; amorphous; microcrystalline silicon p-i-n junctions; solar cells;
D O I
10.1016/S0378-4754(99)00055-5
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
This paper is concerned with the modelling and simulation of amorphous and microcrystalline silicon optoelectronic devices. The physical model and its mathematical formulation are extensively described. Its numerical reduction is also discussed together with the presentation of a computer program dedicated to the simulation of the electrical behaviour of such devices. This computer program, called ASCA (Amorphous Silicon Solar Cells Analysis), is capable of simulating, on one- and two-dimensional domains, the internal electrical behaviour of multi-layer structures, homojunctions and heterojunctions under simple or complex spectra illumination and externally applied biases. The applications of the simulator presented in this work are the analysis of mu c/a-Si:H p-i-n photovoltaic cell in thermal equilibrium and illuminated by monochromatic light and the AM1.5 solar spectrum, with and without polarisation. We also study the appearance within the device of lateral components of the electric field and current density vectors when the illumination is not uniform. (C) 1999 IMACS/Elsevier Science B.V. All rights reserved.
引用
收藏
页码:381 / 401
页数:21
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