Electronic transport through CNT-fluorographene-Au junction: First-principles study

被引：8
作者：
Berdiyorov, G. R. [1 ]
Hamoudi, H. [1 ]
机构：
[1] Hamad Bin Khalifa Univ, Qatar Environm & Energy Res Inst, Doha, Qatar
来源：
EPL | 2020年 / 131卷 / 01期
关键词：
73; 63; -b; Fg; 40; Ns; CARBON; DIODES; CONDUCTANCE; RECTENNAS;
D O I：
10.1209/0295-5075/131/17001
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Quantum transport through CNT-fluorographene-Ag junction is studied using density functional theory in combination with the Landauer-Buttiker formalism. Rectifying behavior is obtained for both single and bilayer fluorographene with rectification ratio exceeding 4. The asymmetric conductance originates from bias-dependent charge localization in the system as was revealed in transmission eigenstates analysis. These findings can be useful in developing metal-insulator-metal junctions for high-frequency applications.
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页数：5
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