Epitaxial Graphene Growth and Shape Dynamics on Copper: Phase-Field Modeling and Experiments

被引:142
作者
Meca, Esteban [1 ]
Lowengrub, John [1 ]
Kim, Hokwon [2 ]
Mattevi, Cecilia [3 ]
Shenoy, Vivek B. [4 ]
机构
[1] Univ Calif Irvine, Dept Math, Irvine, CA 92697 USA
[2] CEA Grenoble, LETI, F-38054 Grenoble, France
[3] Univ London Imperial Coll Sci Technol & Med, Dept Mat, CASC, London SW7 2AZ, England
[4] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
基金
英国工程与自然科学研究理事会; 美国国家科学基金会;
关键词
Graphene; phase field modeling; epitaxial growth; anisotropic diffusion; CHEMICAL-VAPOR-DEPOSITION; GRAIN-BOUNDARIES; CU; FOILS; FILMS;
D O I
10.1021/nl4033928
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The epitaxial growth of graphene on copper foils is a complex process, influenced by thermodynamic, kinetic, and growth parameters, often leading to diverse island shapes including dendrites, squares, stars, hexagons, butterflies, and lobes. Here, we introduce a phase-field model that provides a unified description of these diverse growth morphologies and compare the model results with new experiments. Our model explicitly accounts for the anisotropies in the energies of growing graphene edges, kinetics of attachment of carbon at the edges, and the crystallinity of the underlying copper substrate (through anisotropy in surface diffusion). We show that anisotropic diffusion has a very important, counterintuitive role in the determination of the shape of islands, and we present a "phase diagram" of growth shapes as a function of growth rate for different copper facets. Our results are shown to be in excellent agreement with growth shapes observed for high symmetry facets such as (111) and (001) as well as for high-index surfaces such as (221) and (310).
引用
收藏
页码:5692 / 5697
页数:6
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