Microscopic and optical investigation of Ge nanoislands on silicon substrates

被引：45
作者：
Krasil'nik, ZF
Lytvyn, P
Lobanov, DN
Mestres, N
Novikov, AV
Pascual, J
Valakh, MY
Yukhymchuk, VA
机构：
[1] Russian Acad Sci, Inst Microstruct Phys, Nizhnii Novgorod 603600, Russia
[2] NASU, Inst Semicond Phys, UA-03028 Kiev, Ukraine
[3] CSIC, Inst Ciencia Mat Barcelona, Bellaterra 08193, Spain
[4] Univ Autonoma Barcelona, Dept Fis, Bellaterra 08193, Spain
来源：
NANOTECHNOLOGY | 2002年 / 13卷 / 01期
关键词：
D O I：
10.1088/0957-4484/13/1/318
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We investigate self-assembled nanoislands in heteroepitaxial GeSi systems by means of atomic force microscopy and micro-Raman scattering techniques. We show that the surface diffusion of Si atoms from the substrate to the islands is strongly enhanced when the temperature increases, giving rise to a wider stability range of pyramid-shaped volumes.
引用
收藏
页码：81 / 85
页数：5
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