Fabrication of ZnO thin films by the photochemical deposition method

被引：16

作者：

Azuma, Masaki ^{[1
]}

Ichimura, Masaya ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Nagoya, Aichi 4668555, Japan

来源：

MATERIALS RESEARCH BULLETIN | 2008年 / 43卷 / 12期

关键词：

Semiconductors; Chemical synthesis; Electrochemical measurements;

D O I：

10.1016/j.materresbull.2008.01.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO thin films were fabricated by the photochemical deposition (PCD) method. The deposition solution contains ZnSO4, Na2SO3, Na2S2O3 and a small amount of NH4OH for pH adjustment. We blew oxygen or oxygen + ozone (O-3) gas into the solution to increase the dissolved oxygen content and enhance the oxidation reaction. The films were characterized by Auger electron and optical spectroscopy, and a photoelectrochemical (PEC) measurement. On an indium-tin-oxide (ITO) substrate, the films showed high optical transmission in the visible range. In a current-voltage measurement for films on p-Si substrate, the O-3 bubbling sample showed rectification properties and photovoltaic effects. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：3537 / 3542

页数：6

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