Parametric Delay Test of Post-Bond Through-Silicon Vias in 3-D ICs via Variable Output Thresholding Analysis

被引:37
作者
Lin, Yu-Hsiang [1 ]
Huang, Shi-Yu [1 ]
Tsai, Kun-Han [2 ]
Cheng, Wu-Tung [2 ]
Sunter, Stephen [2 ]
Chou, Yung-Fa [3 ]
Kwai, Ding-Ming [3 ]
机构
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
[2] Mentor Graph Corp, Silicon Test Solut Div, Wilsonville, OR 97070 USA
[3] Ind Technol Res Inst, Informat & Commun Labs, Hsinchu 31040, Taiwan
关键词
3-D IC; design for testability; parametric delay fault testing; through-silicon via; through-silicon vias (TSV) testing; TEST SCHEME; RING;
D O I
10.1109/TCAD.2012.2236837
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A parametric delay fault could arise in a through-silicon via (TSV) of a 3-D IC due to a manufacturing defect. Identification of such a fault is essential for fault diagnosis, yield-learning, and/or reliability screening. In this paper, we present an innovative design-for-testability technique called variable output thresholding. We discovered that by dynamically switching the output of a TSV from a normal inverter to a Schmitt-Trigger inverter, the parametric delay fault on the TSV can be characterized and detected. SPICE simulation reveals that this technique remains effective even when there is significant process variation. A scalable test infrastructure indicates that the test time is modest at only 17.2 ms for 1024 TSVs and 648.8 ms for 32 768 TSVs when the test clock is running at 10 MHz.
引用
收藏
页码:737 / 747
页数:11
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