Ellipsometric study on optical properties of hydrogen plasma-treated aluminum-doped ZnO thin film

被引:27
作者
Gu, Tong [1 ,2 ]
Hu, Er-Tao [1 ,2 ]
Guo, Shuai [1 ,2 ]
Wu, Ying [1 ,2 ]
Wang, Jing [3 ]
Wang, Zhong-Yue [1 ,2 ]
Yu, Ke-Han [1 ,2 ]
Wei, Wei [1 ,2 ]
Zheng, Yu-Xiang [4 ]
Wang, Song-You [4 ]
Chen, Liang-Yao [4 ]
机构
[1] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Jiangsu, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Jiangsu, Peoples R China
[3] Nanjing Univ, Coll Engn & Appl Sci, Nanjing 210093, Jiangsu, Peoples R China
[4] Fudan Univ, Dept Opt Sci & Engn, Shanghai 200433, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
Aluminum-doped zinc oxide; Hydrogen plasma treatment; Resistivity; Transmittance; Spectroscopic ellipsometer; Optical constants; ELECTRICAL-PROPERTIES; DIELECTRIC FUNCTIONS; TIN OXIDE; THICKNESS;
D O I
10.1016/j.vacuum.2019.02.006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Aluminum-doped zinc oxide (AZO) thin films were prepared by radio frequency (RF) sputtering at room temperature, and then post-treated by hydrogen (H-2) plasma at different durations. After H-2 plasma treatment under the condition of 10 W, 200 degrees C and 3.0 Hours, the resistivity showed a dramatically decrease from 1.6 Omega cm to 3.4 x 10(-3) Omega cm, while the transmittance at the wavelength of 550 nm was improved from 90.5% to 96.0%. The optical constants of H-2 plasma-treated AZO thin films were detailed characterized by a varied angle spectroscopic ellipsometer. The results show that the refractive index n decreases in the entire measured wavelength range of 350-1100 nm, while the extinction coefficient k decreases in the short wavelength range and changes negligibly at the long wavelength range. These results can provide guidelines for the design and optimization of AZO thin film-based optoelectronic applications.
引用
收藏
页码:69 / 74
页数:6
相关论文
共 40 条
[1]   Influence of hydrogen plasma thermal treatment on the properties of ZnO:Al thin films prepared by dc magnetron sputtering [J].
Castro, M. V. ;
Cerqueira, M. P. ;
Rebouta, L. ;
Alpuim, P. ;
Garcia, C. B. ;
Junior, G. L. ;
Tavares, C. J. .
VACUUM, 2014, 107 :145-154
[2]   Enhanced conductivity of aluminum doped ZnO films by hydrogen plasma treatment [J].
Chang, H. P. ;
Wang, F. H. ;
Wu, J. Y. ;
Kung, C. Y. ;
Liu, H. W. .
THIN SOLID FILMS, 2010, 518 (24) :7445-7449
[3]   DESIGN OF A SCANNING ELLIPSOMETER BY SYNCHRONOUS ROTATION OF THE POLARIZER AND ANALYZER [J].
CHEN, LY ;
FENG, XW ;
SU, Y ;
MA, HZ ;
QIAN, YH .
APPLIED OPTICS, 1994, 33 (07) :1299-1305
[4]  
Collins R., 2005, Handbook of Ellipsometry
[5]   Relaxing the Conductivity/Transparency Trade-Off in MOCVD ZnO Thin Films by Hydrogen Plasma [J].
Ding, Laura ;
Nicolay, Sylvain ;
Steinhauser, Jerome ;
Kroll, Ulrich ;
Ballif, Christophe .
ADVANCED FUNCTIONAL MATERIALS, 2013, 23 (41) :5177-5182
[6]   Ellipsometric studies on ZnO:Al thin films: Refinement of dispersion theories [J].
Ehrmann, Nicole ;
Reineke-Koch, Rolf .
THIN SOLID FILMS, 2010, 519 (04) :1475-1485
[7]   Optical and electrical properties of aluminum zinc oxide (AZO) nanostructured thin film deposited on polycarbonate substrate [J].
Eshaghi, Akbar ;
Hajkarimi, Mohammad .
OPTIK, 2014, 125 (19) :5746-5749
[8]   On the Mechanism of In Nanoparticle Formation by Exposing ITO Thin Films to Hydrogen Plasmas [J].
Fan, Zheng ;
Maurice, Jean-Luc ;
Chen, Wanghua ;
Guilet, Stephane ;
Cambril, Edmond ;
Lafosse, Xavier ;
Gouraud, Laurent ;
Merghem, Kamel ;
Yu, Linwei ;
Bouchoule, Sophie ;
Roca i Cabarrocas, Pere .
LANGMUIR, 2017, 33 (43) :12114-12119
[9]  
Fujiwara H., 2009, SPECTROSCOPIC ELLIPS
[10]   Morphology controlled synthesis of Al doped ZnO nanosheets on Al alloy substrate by low-temperature solution growth method [J].
Gaddam, Venkateswarlu ;
Kumar, R. Rakesh ;
Parmar, Mitesh ;
Yaddanapudi, G. R. Krishna ;
Nayak, M. M. ;
Rajanna, K. .
RSC ADVANCES, 2015, 5 (18) :13519-13524