Nanomorphological Characteristics of the Single-Crystal Si(100) Surface Subjected to Microwave Plasma Processing at Weak Adsorption

被引：2
|
作者：
Shanygin, V. Ya. [1 ]
Yafarov, R. K. [1 ]
机构：
[1] Russian Acad Sci, Saratov Branch, Kotelnikov Inst Radio Engn & Elect, Saratov 410018, Russia
来源：
TECHNICAL PHYSICS | 2013年 / 58卷 / 04期
关键词：
SILICON;
D O I：
10.1134/S1063784213040221
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of the conditions and composition of the highly ionized plasma of an electron cyclotron resonance low-pressure microwave gas discharge on the nanomorphology of the single-crystal Si(100) surface is studied. Model mechanisms of the processes controlling the main nanomorphological parameters of silicon crystals subjected to low-energy microwave plasma processing in chemically active and inactive gaseous media under the conditions of weak adsorption are considered.
引用
收藏
页码：557 / 562
页数：6
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