CHVPE growth of AlGaN-based UV LEDs

被引：27
|
作者：
Kurin, Sergey [1 ]
Antipov, Andrey [1 ]
Barash, Iosif [1 ]
Roenkov, Alexander [1 ]
Helava, Heikki [2 ]
Tarasov, Sergey [3 ]
Menkovich, Ekaterina [3 ]
Lamkin, Ivan [3 ]
Makarov, Yuri [1 ,2 ]
机构：
[1] Nitride Crystals Ltd, 27 Engels Ave, St Petersburg 194156, Russia
[2] Nitride Crystals Inc, Deer Pk, NY 11729 USA
[3] Saint Petersburg Electrotech Univ LET, St Petersburg 197376, Russia
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3 | 2013年 / 10卷 / 03期
关键词：
chloride-hydride vapour phase epitaxy; nitrides; light-emitting diodes; packaged dies; p-n junction temperature;
D O I：
10.1002/pssc.201200640
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we present results on development of ultraviolet light-emitting diodes (UV LEDs) based on GaN/AlGaN heterostructures grown on Al2O3 (0001) substrates by chloride-hydride vapour phase epitaxy (CHVPE). Both packaged and unpackaged UV LED dies were fabricated. The peak wavelengths of dies were in the range of 360-365 nm with a typical FWHM of 10-13 nm. UV LEDs proved performance capability at current density up to 125 A/cm(2). (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：289 / 293
页数：5
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