Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier

被引：1

作者：

Khanal, Pravin ^{[1
]}

Zhou, Bowei ^{[1
]}

Andrade, Magda ^{[1
]}

Mastrangelo, Christopher ^{[1
]}

Habiboglu, Ali ^{[1
]}

Enriquez, Arthur ^{[1
]}

Fox, Daulton ^{[1
]}

Warrilow, Kennedy ^{[1
]}

Wang, Wei-Gang ^{[1
]}

机构：

[1] Univ Arizona, Dept Phys, Tucson, AZ 85721 USA

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2022年 / 563卷

关键词：

MgAl2O4-barrier; Perpendicular magnetic tunneling junction; Tunneling magnetoresistance; Perpendicular magnetic anisotropy; Reactive sputtering; ROOM-TEMPERATURE;

D O I：

10.1016/j.jmmm.2022.169914

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O-2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in MgAl2O4-based junctions. An interfacial perpendicular magnetic anisotropy energy density of 2.25 mJ/m(2) is obtained for the samples annealed at 400 C. An enhanced magnetoresistance of 60% has also been achieved. The V-half,V- bias voltage at which tunneling magnetoresistance drops to half of the zero-bias value, is found to be about 1 V, which is substantially higher than that of MgO-based junctions.

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页数：5

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