Temperature impact on the tunnel fet off-state current components

被引：68

作者：

Der Agopian, Paula Ghedini ^{[1
]}

Martino, Marcio Dalla Valle ^{[1
]}

dos Santos Filho, Sebastiao Gomes ^{[1
]}

Martino, Joao Antonio ^{[1
]}

Rooyackers, Rita ^{[2
]}

Leonelli, Daniele ^{[2
,3
]}

Claeys, Cor ^{[2
,3
]}

机构：

[1] Univ Sao Paulo, LSI PSI USP, BR-05508010 Sao Paulo, Brazil

[2] IMEC, B-3001 Louvain, Belgium

[3] KULeuven, EE Dept, Louvain, Belgium

来源：

SOLID-STATE ELECTRONICS | 2012年 / 78卷

关键词：

Triple gate SOI tunnel FETs; Off-state current components; Temperature; Ambipolar behavior; SRH; TAT;

D O I：

10.1016/j.sse.2012.05.053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the temperature impact on the off-state current components is analyzed through numerical simulation and experimentally. First of all, the band-to-band tunneling is studied by varying the underlap in the channel/drain junction, leading to an analysis of the different off-state current components. For pTFET devices, the best behavior for off-state current was obtained for higher values of underlap (reduced BTBT) and at low temperatures (reduced SRH and TAT). At high temperature, an unexpected off-state current occurred due to the thermal leakage current through the drain/channel junction. Besides, these devices presented a good performance when considering the drain current as a function of the drain voltage, making them suitable for analog applications. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：141 / 146

页数：6

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