Charge transport mechanism and amphoteric nature of traps in amorphous silicon nitride

被引：5

作者：

Novikov, Yu N. ^{[1
]}

Gritsenko, V. A. ^{[1
,2
,3
]}

机构：

[1] Rzhanov Inst Semicond Phys SBRAS, 13 Lavrentiev Aven, Novosibirsk 630090, Russia

[2] Novosibirsk Natl Res Univ, 2 Pirogov Str, Novosibirsk 630090, Russia

[3] Novosibirsk State Tech Univ, 20 Marx Aven, Novosibirsk 630073, Russia

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2020年 / 544卷

基金：

俄罗斯科学基金会;

关键词：

Amorphous silicon nitride; SiNx; Traps; Charge transport; MEMORY;

D O I：

10.1016/j.jnoncrysol.2020.120186

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The charging and discharging processes in amorphous silicon nitride (a-SiNx) by using the Metal/a-SiNx/SiO2/Si structure (MNOS) were experimentally and theoretically considered. The tunnel-thick (10 nm) SiO2 layer and metal gates with different work functions were used. This made it possible to separate the electron and hole components of the currents during the charging voltage action. The discharge times in the MNOS-structure at high temperatures (400 K) and the same "pulling" voltage coincide for electrons and holes. The charge transport is described by the multiphonon mechanism of trap ionization. In the discharging mode, the parameters of electron and hole traps in SiNx were determined and they turned out to be equal, and that indicate the amphoteric nature of traps in SiNx.

引用

页数：7

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