Growth and characterization of stacking fault reduced GaN( 1 0 1($)over-bar 3) on sapphire

被引：13

作者：

Blaesing, Juergen ^{[1
]}

Holy, Vaclav ^{[2
]}

Dadgar, Armin ^{[1
]}

Veit, Peter ^{[1
]}

Christen, Juergen ^{[1
]}

Ploch, Simon ^{[3
]}

Frentrup, Martin ^{[3
]}

Wernicke, Tim ^{[3
]}

Kneissl, Michael ^{[3
]}

Krost, Alois ^{[1
]}

机构：

[1] Univ Magdeburg, Fak Nat Wissensch, Inst Expt Phys, D-39016 Magdeburg, Germany

[2] Charles Univ Prague, Fac Math & Phys, Dept Condensed Matter Phys, CR-12116 Prague 2, Czech Republic

[3] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2013年 / 46卷 / 12期

关键词：

STRESS;

D O I：

10.1088/0022-3727/46/12/125308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a transmission electron microscope (TEM) and x-ray diffraction (XRD) study of metalorganic vapor phase epitaxy grown GaN(1 0 ($) over bar1 3) layers on m-sapphire with Al(Ga) N interlayers. The interlayers are demonstrated to be beneficial in reducing the stacking fault (SF) density by more than 2.5 orders of magnitude from >2 x 106 cm(-1) to < 5 x 103 cm(-1) as determined by TEM. XRD measurements along the GaN(1 0 <($)over bar>1 2) to the GaN(1 0 ($) over bar1 5) reflection reveal a diffraction component originating in the basal plane SFs. Fitting the XRD signal enables a fast and simple determination of SF type and density which can even distinguish between the GaN buffer and the upper GaN layers and which is in reasonable agreement with TEM measurements.

引用

页数：4

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