Optical lithography attains 80-nm features

被引：0
作者：
不详
机构：
来源：
LASER FOCUS WORLD | 1999年 / 35卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：9 / 9
页数：1
相关论文
共 50 条
[21]   A 40-MHz-to-1-GHz Fully Integrated Multistandard Silicon Tuner in 80-nm CMOS [J].
Greenberg, Jody ;
De Bernardinis, Fernando ;
Tinella, Carlo ;
Milani, Antonio ;
Pan, Johnny ;
Uggetti, Paola ;
Sosio, Marco ;
Dai, Shaoan ;
Tang, Samuel Er-Shen ;
Cesura, Giovanni ;
Gandolfi, Gabriele ;
Colonna, Vittorio ;
Castello, Rinaldo .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2013, 48 (11) :2746-2761
[22]   Water immersion optical lithography at 193 nm [J].
Smith, BW ;
Bourov, A ;
Kang, HY ;
Cropanese, F ;
Fan, YF ;
Lafferty, N ;
Zavyalova, L .
JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2004, 3 (01) :44-51
[23]   Status of 157-nm optical lithography [J].
Trybula, WJ .
JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2005, 4 (01) :1-5
[24]   Optical lithography for the 32nm node [J].
Sewell, H ;
McCafferty, D ;
Wagner, C ;
Markoya, L .
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2005, 18 (05) :579-586
[25]   A low-power 20-GHz 52-dBΩ transimpedance amplifier in 80-nm CMOS [J].
Kromer, C ;
Sialm, G ;
Morf, T ;
Schmatz, ML ;
Ellinger, F ;
Erni, D ;
Jäckel, H .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (06) :885-894
[26]   Improving nanoimprint lithography stamps for the 10 nm features [J].
Beck, M ;
Graczyk, M ;
Maximov, I ;
Sarwe, EL ;
Ling, TGI ;
Montelius, L .
PROCEEDINGS OF THE 2001 1ST IEEE CONFERENCE ON NANOTECHNOLOGY, 2001, :17-22
[27]   Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography [J].
Austin, MD ;
Ge, HX ;
Wu, W ;
Li, MT ;
Yu, ZN ;
Wasserman, D ;
Lyon, SA ;
Chou, SY .
APPLIED PHYSICS LETTERS, 2004, 84 (26) :5299-5301
[28]   Manufacturable 100-nm features from 248-nm lithography [J].
不详 .
SOLID STATE TECHNOLOGY, 1998, 41 (07) :54-54
[29]   BREAK-CROSS-TIE DOMAIN-WALLS IN THIN PERMALLOY-FILMS ABOVE 80-NM [J].
BIALON, J ;
WYSLOCKI, B .
ACTA PHYSICA POLONICA A, 1978, 53 (03) :375-&
[30]   Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology [J].
Tseng, HH ;
Jeon, Y ;
Abramowitz, P ;
Luo, TY ;
Hebert, L ;
Lee, JJ ;
Jiang, J ;
Tobin, PJ ;
Yeap, GCF ;
Moosa, M ;
Alvis, J ;
Anderson, SGH ;
Cave, N ;
Chua, TC ;
Hegedus, A ;
Miner, G ;
Jeon, J ;
Sultan, A .
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (12) :704-706
12345