Optical lithography attains 80-nm features

被引：0
作者：
不详
机构：
来源：
LASER FOCUS WORLD | 1999年 / 35卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：9 / 9
页数：1
相关论文
共 50 条
  • [21] A low-power 20-GHz 52-dBΩ transimpedance amplifier in 80-nm CMOS
    Kromer, C
    Sialm, G
    Morf, T
    Schmatz, ML
    Ellinger, F
    Erni, D
    Jäckel, H
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (06) : 885 - 894
  • [22] Water immersion optical lithography at 193 nm
    Smith, BW
    Bourov, A
    Kang, HY
    Cropanese, F
    Fan, YF
    Lafferty, N
    Zavyalova, L
    JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2004, 3 (01): : 44 - 51
  • [23] Optical lithography with 157-nm technology
    Modderman, T
    Jasper, H
    Boom, H
    Uitterdijk, T
    Dana, S
    Sewell, H
    O'Neil, T
    Mulkens, J
    Brunotte, M
    Mecking, B
    Gruner, T
    OPTICAL MICROLITHOGRAPHY XVII, PTS 1-3, 2004, 5377 : 816 - 826
  • [24] Optical lithography for the 32nm node
    Sewell, H
    McCafferty, D
    Wagner, C
    Markoya, L
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2005, 18 (05) : 579 - 586
  • [25] Status of 157-nm optical lithography
    Trybula, WJ
    JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2005, 4 (01): : 1 - 5
  • [26] Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography
    Austin, MD
    Ge, HX
    Wu, W
    Li, MT
    Yu, ZN
    Wasserman, D
    Lyon, SA
    Chou, SY
    APPLIED PHYSICS LETTERS, 2004, 84 (26) : 5299 - 5301
  • [27] Improving nanoimprint lithography stamps for the 10 nm features
    Beck, M
    Graczyk, M
    Maximov, I
    Sarwe, EL
    Ling, TGI
    Montelius, L
    PROCEEDINGS OF THE 2001 1ST IEEE CONFERENCE ON NANOTECHNOLOGY, 2001, : 17 - 22
  • [28] Manufacturable 100-nm features from 248-nm lithography
    不详
    SOLID STATE TECHNOLOGY, 1998, 41 (07) : 54 - 54
  • [29] Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology
    Tseng, HH
    Jeon, Y
    Abramowitz, P
    Luo, TY
    Hebert, L
    Lee, JJ
    Jiang, J
    Tobin, PJ
    Yeap, GCF
    Moosa, M
    Alvis, J
    Anderson, SGH
    Cave, N
    Chua, TC
    Hegedus, A
    Miner, G
    Jeon, J
    Sultan, A
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (12) : 704 - 706
  • [30] BREAK-CROSS-TIE DOMAIN-WALLS IN THIN PERMALLOY-FILMS ABOVE 80-NM
    BIALON, J
    WYSLOCKI, B
    ACTA PHYSICA POLONICA A, 1978, 53 (03) : 375 - &
12345