Optical lithography attains 80-nm features

被引：0
|
作者：
不详
机构：
来源：
LASER FOCUS WORLD | 1999年 / 35卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：9 / 9
页数：1
相关论文
共 50 条
  • [1] SCALPEL e-beam prints 80-nm features
    不详
    SOLID STATE TECHNOLOGY, 1996, 39 (09) : 50 - 50
  • [2] Application of new thin BARC technology for KrF lithography at 80-nm node device
    Kim, MS
    Shim, KC
    Kim, HJ
    Kwon, KS
    Lee, HG
    Lee, CS
    Gil, MG
    Song, YW
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2, 2004, 5376 : 724 - 728
  • [3] Patterning 80-nm gates using 248-nm lithography: An approach for 0.13 micron VLSI manufacturing
    Wang, CM
    Lai, CW
    Huang, J
    Liu, HY
    OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2, 2001, 4346 : 452 - 463
  • [4] Yaravirus: A novel 80-nm virus infecting Acanthamoeba castellanii
    Boratto, Paulo V. M.
    Oliveira, Graziele P.
    Machado, Talita B.
    Andrade, Ana Claudia S. P.
    Baudoin, Jean-Pierre
    Klose, Thomas
    Schulz, Frederik
    Azza, Said
    Decloquement, Philippe
    Chabriere, Eric
    Colson, Philippe
    Levasseur, Anthony
    La Scola, Bernard
    Abrahao, Jonatas S.
    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2020, 117 (28) : 16579 - 16586
  • [5] 70 nm features on 140 nm period using Evanescent Near Field Optical Lithography
    Alkaisi, MM
    Blaikie, RJ
    McNab, SJ
    MICROELECTRONIC ENGINEERING, 2000, 53 (1-4) : 237 - 240
  • [6] Design of a 80-nm tunable hybrid III/V-on-silicon laser
    Santana, Henrique F.
    de Farias, Giovanni B.
    Freitas, Alexandre P.
    Motta, Diogo A.
    Carvalho Junior, Wilson
    2017 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE (IMOC), 2017,
  • [7] OPTICAL LITHOGRAPHY AT 248 NM
    HIBBS, MS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (01) : 199 - 202
  • [8] An autonomous SRAM with on-chip sensors in an 80-nm double stacked cell technology
    Sohn, K
    Mo, HS
    Suh, YH
    Byun, HG
    Yoo, HJ
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (04) : 823 - 830
  • [9] Fabrication of self-aligned surface tunnel transistors with a 80-nm gate length
    Chun, YJ
    Uemura, T
    Baba, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (12B): : L1273 - L1276
  • [10] A 40-GHz static frequency divider with quadrature outputs in 80-nm CMOS
    Kromer, Christian
    von Bueren, George
    Sialm, Gion
    Morf, Thomas
    Ellinger, Frank
    Jaeckel, Heinz
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (10) : 564 - 566
12345