Ultrafast lasers improve the efficiency of CIS thin film solar cells

被引：14

作者：

Heise, Gerhard ^{[1
]}

Heiss, Andreas ^{[2
]}

Vogt, Helmut ^{[2
]}

Huber, Heinz P. ^{[1
]}

机构：

[1] Munich Univ Appl Sci MUAS, Laserctr, Dept Precis & Microengn, Lothstr 34, D-80335 Munich, Germany

[2] AVANCIS GmbH & Co KG, D-81739 Munich, Germany

来源：

LASER ASSISTED NET SHAPE ENGINEERING 7 (LANE 2012) | 2012年 / 39卷

关键词：

Laser ablation; Ultrafast laser; Picosecond laser; Monolithic interconnection; Selective structuring; thin film; solar cell; CIS; MODULES;

D O I：

10.1016/j.phpro.2012.10.091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CIS (Cu(In, Ga)(S, Se)(2)) thin film solar cells show a high potential to achieve the efficiencies of Si wafer-based solar cells. The commonly applied patterning processes for the integrated interconnects are based on nanosecond laser ablation and mechanical scribing. Both methods introduce damages on the thin films by thermal effects and mechanical forces. By picosecond laser processing we realized all three patterning steps to the monolithic thin films CIS modules, namely the separation of the molybdenum back electrode, the absorber and the ZnO font electrode (P1, P2 and P3 respectively). We achieved an efficiency of 14.7% for 300 x 300 mm(2) modules. (C) 2012 Published by Elsevier B.V. Selection and/or review under responsibility of Bayerisches Laserzentrum GmbH

引用

页码：702 / 708

页数：7

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