Fabrication and characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes

被引：13

作者：

Rao, Gowrish K. ^{[1
]}

Bangera, Kasturi V. ^{[2
]}

Shivakumar, G. K. ^{[2
]}

机构：

[1] Manipal Univ, Dept Phys, Manipal Inst Technol, Manipal 576104, Karnataka, India

[2] Natl Inst Technol Karnataka, Thin Film Lab, Dept Phys, Mangalore 575025, India

来源：

CURRENT APPLIED PHYSICS | 2013年 / 13卷 / 01期

关键词：

n-Si/p-ZnTe heterojunction; Thermal evaporation; I-V characterization; C-V characterization; Band diagram; ELECTRICAL-PROPERTIES; OPTOELECTRONIC PROPERTIES; CDTE;

D O I：

10.1016/j.cap.2012.08.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I-V and C-V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：298 / 301

页数：4

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