Decamethylcobaltocene as an efficient n-dopant in organic electronic materials and devices

被引:98
作者
Chan, Calvin K. [1 ]
Zhao, Wei [1 ]
Barlow, Stephen [2 ]
Marder, Seth [2 ]
Kahn, Antoine [1 ]
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Georgia Inst Technol, Dept Chem & Biochem, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
organic semiconductor; n-type doping; metallocene; photoemission spectroscopy; phthalocyanine;
D O I
10.1016/j.orgel.2008.03.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
n-Doping of copper phthalocyanine (CuPc), which has an electron affinity (EA) of 3.52 eV, by decamethylcobaltocene (DMC) is demonstrated. DMC has a remarkably low solid-state ionization energy (IE) of 3.3 eV, as measured by ultra-violet photoemission spectroscopy (UPS). Further UPS measurements show a large 1.4 eV upward shift of the Fermi-level within the single particle gap of CuPc between the p- and n-doped films. n-Doping is also confirmed by current-voltage (I-V) measurements, which show a 10(6)-fold increase in current density due to improved electron injection and enhanced conductivity of the bulk film. An organic p-i-n CuPc homojunction is also fabricated using F-4-TCNQ and DMC as p- and n-dopants, respectively. Current-voltage characteristics demonstrate excellent rectification with a turn on voltage of approximately 1.3 eV, which is consistent with the built-in voltage measured by UPS and capacitance-voltage (C-V) measurements. (C) 2008 Elsevier BY. All rights reserved.
引用
收藏
页码:575 / 581
页数:7
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