Etching of copper in deionized water rinse

被引：0

作者：

Gambino, J. ^{[1
]}

Robbins, J. ^{[1
]}

Rutkowski, T. ^{[1
]}

Johnson, C. ^{[1
]}

DeVries, K. ^{[2
]}

Rath, D.

Vereecken, P. ^{[3
]}

Walton, E. ^{[2
,3
]}

Porth, B. ^{[1
]}

Wenner, M. ^{[1
]}

McDevitt, T. ^{[1
]}

Chapple-Sokol, J. ^{[1
]}

Luce, S. ^{[1
]}

机构：

[1] IBM Microelect, 1000 River St, Essex Jct, VT 05452 USA

[2] IBM Micelect, Hopewell Jct, NY USA

[3] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IPFA 2008: PROCEEDINGS OF THE 15TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new yield loss mechanism is described that is related to the etching of Cu in deionized water. Water that contains high concentrations of dissolved oxygen can etch Cu at the bottom of vias during pre-metallization wet cleans. The etching creates voids in the Cu which remain after metallization, resulting in high resistance and functional fails in the affected array circuits. The dissolved oxygen concentration in the deionized water must be minimized to prevent etching of Cu.

引用

页码：308 / +

页数：2

共 12 条

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