Photoluminescence study of ZnCdSe/ZnSe quantum dot systems

被引：4

作者：

Lee, JR

Lu, CR ^{[1
]}

You, CH

Jen, JY

机构：

[1] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan

[2] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2005年 / 66卷 / 11期

关键词：

D O I：

10.1016/j.jpcs.2005.09.026

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The optical properties of the populated ZnCdSe/ZnSe quantum dots have been studied by photoluminescence spectra measured with different laser excitation apertures at temperatures from 22 to 300 K. The differences of spectral features between small and large excitation spot suggest the existence of quantum dot size fluctuation in the system. The temperature evolution of photoluminescence spectral features revealed that two types of quantum dots with different densities and sizes coexist in ZnCdSe/ZnSe system. The energy spacings of the two kinds of quantum dot emissions are about 50 meV at various temperatures. The thermally activated lateral transfer processes of carriers populated in the two sorts of quantum dots are investigated by temperature dependences of spectral intensities. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1920 / 1923

页数：4

共 17 条

[1] Shell structure and electron-electron interaction in self-assembled InAs quantum dots [J].

Fricke, M ;

Lorke, A ;

Kotthaus, JP ;

MedeirosRibeiro, G ;

Petroff, PM .

EUROPHYSICS LETTERS, 1996, 36 (03) :197-202

[2] Excitons, biexcitons, and phonons in ultrathin CdSe/ZnSe quantum structures [J].

Gindele, F ;

Woggon, U ;

Langbein, W ;

Hvam, JM ;

Leonardi, K ;

Hommel, D ;

Selke, H .

PHYSICAL REVIEW B, 1999, 60 (12) :8773-8782

[3] ULTRANARROW LUMINESCENCE LINES FROM SINGLE QUANTUM DOTS [J].

GRUNDMANN, M ;

CHRISTEN, J ;

LEDENTSOV, NN ;

BOHRER, J ;

BIMBERG, D ;

RUVIMOV, SS ;

WERNER, P ;

RICHTER, U ;

GOSELE, U ;

HEYDENREICH, J ;

USTINOV, VM ;

EGOROV, AY ;

ZHUKOV, AE ;

KOPEV, PS ;

ALFEROV, ZI .

PHYSICAL REVIEW LETTERS, 1995, 74 (20) :4043-4046

[4] Exciton tunnelling in ZnCdSe quantum well/CdSe quantum dots [J].

Jin, H ;

Zhang, LG ;

Zheng, ZH ;

Kong, XG ;

Shen, DZ .

SOLID STATE COMMUNICATIONS, 2004, 130 (10) :653-655

[5] Photoluminescence study of CdTe ZnTe self-assembled quantum dots [J].

Karczewski, G ;

Mackowski, S ;

Kutrowski, M ;

Wojtowicz, T ;

Kossut, J .

APPLIED PHYSICS LETTERS, 1999, 74 (20) :3011-3013

[6] Optical observation of quantum-dot formation in sub-critical CdSe layers grown on ZnSe [J].

Kim, CS ;

Kim, M ;

Lee, S ;

Furdyna, JK ;

Dobrowolska, M ;

Rho, H ;

Smith, LM ;

Jackson, HE .

JOURNAL OF CRYSTAL GROWTH, 2000, 214 :761-764

[7]

Kummell T, 1998, APPL PHYS LETT, V73, P3105, DOI 10.1063/1.122687

[8] Temperature and excitation dependence of photoluminescence line shape in InAs/GaAs quantum-dot structures [J].

Lee, H ;

Yang, WD ;

Sercel, PC .

PHYSICAL REVIEW B, 1997, 55 (15) :9757-9762

[9] Single quantum dot spectroscopy of CdSe/ZnSe grown on vicinal GaAs substrates [J].

Makino, T ;

André, R ;

Gérard, JM ;

Romestain, R ;

Dang, LS ;

Bartels, M ;

Lischka, K ;

Schikora, D .

APPLIED PHYSICS LETTERS, 2003, 82 (14) :2227-2229

[10] Temperature dependence of the optical properties of InAs/AlyGa1-yAs self-organized quantum dots [J].

Polimeni, A ;

Patanè, A ;

Henini, M ;

Eaves, L ;

Main, PC .

PHYSICAL REVIEW B, 1999, 59 (07) :5064-5068

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