Effect of chemical vapor infiltration of Si3N4 on the mechanical and dielectric properties of porous Si3N4 ceramic fabricated by a technique combining 3-D printing and pressureless sintering

被引：77

作者：

Li, Xiangming ^{[1
]}

Zhang, Litong ^{[2
]}

Yin, Xiaowei ^{[2
]}

机构：

[1] NW A&F Univ, Coll Water Resources & Architecture Engn, Yangling 712100, Shaanxi, Peoples R China

[2] Northwestern Polytech Univ, Natl Key Lab Thermostruct Composite Mat, Xian 710072, Shaanxi, Peoples R China

来源：

SCRIPTA MATERIALIA | 2012年 / 67卷 / 04期

关键词：

Si3N4; 3-D printing; CVI; Mechanical properties; Dielectric properties; SILICON-NITRIDE CERAMICS; HIGH-STRENGTH; MICROSTRUCTURE; MORPHOLOGY; ADDITIVES; OXIDATION; YB2O3;

D O I：

10.1016/j.scriptamat.2012.05.030

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Porous Si3N4 ceramic with a porosity higher than 70% is fabricated by a technique combining three-dimensional printing and pressureless sintering. Using chemical vapor infiltration (CVI) of Si3N4, the mechanical properties of the porous Si3N4 ceramic are clearly improved by increases in the connection strength among beta-Si(3)N4 particles and the loading ability of beta-Si3N4 particles. The porous Si3N4 ceramic after CVI of Si3N4 is an excellent wave-transparent material due to its good mechanical properties and excellent dielectric properties. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：380 / 383

页数：4

共 33 条

[1] SI3N4 AND SI2N2O FOR HIGH-PERFORMANCE RADOMES [J].