Intraband absorption and interband photoconductivity transients in Ge/Si quantum dots

被引：1

作者：

Kirilenko, O. I. ^{[1
]}

Balagula, R. M. ^{[1
]}

Sofronov, A. N. ^{[1
]}

Firsov, D. A. ^{[1
]}

Vorobjev, L. E. ^{[1
]}

机构：

[1] Peter Great St Petersburg Polytech Univ, Polytech Skaya 29, St Petersburg 195251, Russia

来源：

18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS | 2017年 / 816卷

关键词：

D O I：

10.1088/1742-6596/816/1/012027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work a series of relaxation curves of photoinduced intraband absorption and interband photoconductivity were measured in Ge/Si quantum dots in the temperature range from 80 K to 300 K and at different levels of the interband excitation. The low-temperature experimental curves show a two-step decay of a population of quantum dots. At high temperatures there is only one decay component. A simultaneous analysis of photoinduced intraband absorption and interband photoconductivity relaxation curves shows that quantum dots act as traps for non-equilibrium holes only at low temperatures.

引用

页数：4

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