A nitrogen-related deep level defect in ion implanted 4H-SiC pn junctions-A spin dependent recombination study

被引：19

作者：

Aichinger, Thomas ^{[1
]}

Lenahan, Patrick M. ^{[1
]}

Tuttle, Blair R. ^{[2
]}

Peters, Dethard ^{[3
]}

机构：

[1] Penn State Univ, University Pk, PA 16802 USA

[2] Penn State Univ, Erie, PA 16563 USA

[3] Infineon Technol AG, D-91058 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 11期

基金：

美国国家科学基金会;

关键词：

ELECTRON-PARAMAGNETIC-RESONANCE; EPR; MECHANISM; ENDOR;

D O I：

10.1063/1.3695330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitrogen implantation creates a high density of recombination centers in SiC which can degrade the performance of ion implanted pn junctions. We use spin dependent recombination (SDR) to identify deep level defects associated with these centers. We find a dominating SDR spectrum with three strong lines of equal intensity. The SDR pattern indicates that the observed center is a defect complex involving nitrogen. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3695330]

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页数：4

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