Tuning the resistive switching in tantalum oxide-based memristors by annealing

被引：7

作者：

Li, Yang ^{[1
]}

Suyolcu, Y. Eren ^{[2
,3
]}

Sanna, Simone ^{[1
,4
,5
]}

Christensen, Dennis Valbjorn ^{[1
]}

Traulsen, Marie Lund ^{[1
]}

Stamate, Eugen ^{[1
]}

Pedersen, Christian Sondergaard ^{[1
]}

van Aken, Peter A. ^{[2
]}

Garcia Lastra, Juan Maria ^{[1
]}

Esposito, Vincenzo ^{[1
]}

Pryds, Nini ^{[1
]}

机构：

[1] Tech Univ Denmark, Dept Energy Convers & Storage, DK-2800 Lyngby, Denmark

[2] Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany

[3] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[4] Univ Roma Tor Vergata, Dipartimento Ingn Civile & Ingn Informat, Via Politecn 1, I-00133 Rome, Italy

[5] Univ Roma Tor Vergata, CNR SPIN, Via Politecn 1, I-00133 Rome, Italy

来源：

AIP ADVANCES | 2020年 / 10卷 / 06期

基金：

欧盟地平线“2020”;

关键词：

Annealing - Titanium nitride - Interface states - Memristors - Switching;

D O I：

10.1063/5.0004722

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A key step in engineering resistive switching is the ability to control the device switching behavior. Here, we investigate the possibility to tune the resistive switching of tantalum oxide (TaOx)-based memristors from a non-switchable state to a switchable state by applying post-fabrication annealing of the devices. The switching of the devices was found to be related to: (1) the oxidation state changes in the TaOx thin film after annealing and (2) the local variations in oxygen stoichiometry in the vicinity of the interface between the TiN electrode and the TaOx active resistive layer. We further discuss the possible mechanism behind the resistive switching after annealing. This experimental approach provides a simple but powerful pathway to trigger the resistive switching in devices that do not show any resistive switching initially.

引用

页数：7

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