An investigation of the electrical transport properties of graphene-oxide thin films

被引：215

作者：

Venugopal, Gunasekaran ^{[2
,3
,4
]}

Krishnamoorthy, Karthikeyan ^{[2
]}

Mohan, Rajneesh ^{[1
]}

Kim, Sang-Jae ^{[1
,2
,5
,6
]}

机构：

[1] Jeju Natl Univ, Dept Mechatron Engn, Cheju 690756, South Korea

[2] Jeju Natl Univ, Dept Mech Engn, Nano Mat & Syst Lab, Cheju 690756, South Korea

[3] Karunya Univ, Fac Nanosci, Coimbatore 641114, Tamil Nadu, India

[4] Karunya Univ, Sch Nanosci & Technol, Dept Technol, Coimbatore 641114, Tamil Nadu, India

[5] Jeju Natl Univ, Fac Mechatron Engn, Cheju 690756, South Korea

[6] Jeju Natl Univ, Res Inst Adv Technol, Cheju 690756, South Korea

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2012年 / 132卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

Graphene oxide; Modified Hummers method; Functional groups; Transistor; WALLED CARBON NANOTUBES; EXFOLIATION; SHEETS;

D O I：

10.1016/j.matchemphys.2011.10.040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical transport properties of graphene-oxide (GO) thin films were investigated. The GO was synthesized by a modified Hummers method and was characterized by X-ray diffraction and UV-visible spectroscopy. The thin film of GO was made on a Si/SiO2 substrate by drop-casting. The surface morphology of the GO film was analyzed by using scanning electron microscopy and atomic force microscopy techniques. Temperature dependent resistance and current-voltage measurements were studied using four-terminal method at various temperatures (120, 150, 175,200, 250 and 300 K) and their charge transport followed the 3D variable range hopping mechanism which was well supported by Raman spectra analysis. The presence of various functional groups in GO were identified by using high resolution X-ray photo electron (XPS) and Fourier transform infra red (FT-IR) spectroscopic techniques. Graphene-oxide thin film field effect transistor devices show p-type semiconducting behavior with a hole mobility of 0.25 cm(2) V-1 s(-1) and 0.59 cm(2) V-1 s(-1) when measured in air and vacuum respectively. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：29 / 33

页数：5

共 42 条

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