10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate

被引：1

作者：

Feng, Zhihong ^{[1
]}

Liu, Bo ^{[1
]}

Yin, Jiayun ^{[1
]}

Wang, Jinjin ^{[1
]}

Gu, Guodong ^{[1
]}

Dun, Shaobo ^{[1
]}

Cai, Shujun ^{[1
]}

机构：

[1] Hebei Semicond Res Inst, Sci & Technol ASIC Lab, Shijiazhuang 050051, Peoples R China

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期

关键词：

InAlN/GaN; HFET; carrier density; dislocation; maximum output power density; ALGAN-GANHEMTS; HEMTS; MOVPE;

D O I：

10.1002/pssc.201100306

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A high-performance InAlN/GaN heterojunction field effect transistor with a nominal gate length of 0.25 mu m was fabricated on a sapphire substrate. Low defect density and low sheet resistance were obtained for the heterostructure under tests. The fabricated device exhibited a negligible current collapse, and remarkable RF characteristics, i.e. a maximum output power density of 4.69 W/mm at 10 GHz, a linear gain of 11.8 dB, and a peak power-added efficiency of 48%, suggesting the extraordinary performances reachable by InAlN based technology. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：855 / 857

页数：3

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