800-nA Process-and-Voltage-Invariant 106-dB PSRR PTAT Current Reference

被引：24

作者：

Amaravati, Anvesha ^{[1
]}

Dave, Marshnil ^{[1
]}

Baghini, Maryam Shojaei ^{[1
]}

Sharma, Dinesh K. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2013年 / 60卷 / 09期

关键词：

Process and temperature tolerance; proportional to absolute temperature (PTAT) current; resistor; transconductance; CIRCUIT; RESISTORS; DESIGN;

D O I：

10.1109/TCSII.2013.2268435

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief presents a novel process-and-voltage invariant proportional to absolute temperature (PTAT) current reference. The proposed circuit is designed and fabricated in 180-nm mixed-mode CMOS technology. Measurement results show that the I-PTAT varies only by +/- 2.4% (+/- 3 sigma/mean) across 18 test chips. One thousand Monte Carlo simulation runs show that the maximum deviation (+/- 3 sigma/mean) from the desired value of the PTAT current is +/- 5.4%. The proposed PTAT current reference uses a process, voltage, and temperature (PVT)-invariant resistor circuit having R-ON variation reduced by 4.2 times, as compared to a fixed biased MOSFET. The proposed PTAT current reference draws only 800-nA current from the supply voltage and also exhibits a high dc power supply rejection ratio (PSRR) of 106 dB. This brief also presents a PVT-invariant transconductance using the implemented PVT-invariant resistor.

引用

页码：577 / 581

页数：5

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