The copper influence on the PL spectra of CdTe thin film as a component of the CdS/CdTe heterojunction

被引：13

作者：

Vatavu, Sergiu ^{[1
]}

Zhao, Hehong ^{[2
]}

Caraman, Iuliana ^{[3
]}

Gasin, Petru ^{[1
]}

Ferekides, Chris ^{[2
]}

机构：

[1] Moldova State Univ, Semicond Phys Lab, Fac Phys, Kishinev 2009, MD, Moldova

[2] Univ S Florida, Ctr Clean Energy & Vehicles, Dept Elect Engn, Tampa, FL 33620 USA

[3] Univ Bacau, Dept Engn, Bacau 600115, Romania

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 07期

关键词：

CdS; CdTe; Cu; Heterojunction; Photoluminescence (PL); BAND; PHOTOLUMINESCENCE; EMISSION; EDGE; CU; DIFFUSION; MECHANISM; DONOR;

D O I：

10.1016/j.tsf.2008.10.087

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of annealing in the presence of CdCl2 and a thin copper layer deposited onto CdTe on the photoluminescence spectra of CdTe, as a component of CdS/CdTe heterojunction, has been studied for two excitation wavelengths: 0.337 mu m and 0.6328 mu m. The behavior of the PL was studied as a function of the measurement temperature and excitation intensity. At 0.6328 mu m excitation, the interface PL consists of a known 1.43X band, and the chloride annealing enhances radiative transitions at 1.536 eV. The intensity of the 1.536 eV transitions increases when Cu is present. The PL of as-deposited CdTe films prepared in the presence of oxygen has the 1.45X band attenuated when excited with 0.337 mu m excitation wavelength. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2195 / 2201

页数：7

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