Stray Impedance Measurement and Improvement of High-Power IGCT Gate Driver Units

被引：27

作者：

Chen, Zhengyu ^{[1
]}

Yu, Zhanqing ^{[1
]}

Liu, Xuan ^{[1
]}

Liu, Jiapeng ^{[1
]}

Zeng, Rong ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2019年 / 34卷 / 07期

关键词：

Gate driver unit; integrated gate-commutated thyristor (IGCT); stray impedance; turn-off;

D O I：

10.1109/TPEL.2018.2826046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Turn-off capability of integrated gate-commutated thyristor is highly dependent on the commutation capability of its gate driver unit (GDU). To enhance it, stray impedance is the crucial limitation, which has not been obtained accurately before. Thus, in this paper, acquisition method of impedance based on experimental measurements was carefully analyzed, including electrolytic and ceramic capacitors, MOSFETS, printed circuit board, and GCT housing. And each part of stray impedance was obtained based on a series of experiments with 6-inch GCTs and two types of conventional GDUs. To further enhance commutation speed, an improved GDU was developed, reducing the total stray inductance from 0.395 to 0.037 nH, stray resistance from 0.444 to 0.227 m Omega. An extremely high current of 12.5 kA was successfully turned off, which is the maximum turn-off current level so far. Besides, the maximum commutation capability was tested as over 17 kA. Consequently, no further optimization of GDU is necessary. However, there was still about 1.0 nH existing inside the GCT housing we used. A novel housing with lower stray inductance is expected for higher commutation speed in the future.

引用

页码：6639 / 6647

页数：9

共 20 条

[1]

[Anonymous], 2006, PROC 4 INT C INTEGR

[2]

[Anonymous], 2002, DAT PD 94506A

[3]

[Anonymous], 2009, DAT PD 97434

[4]

Backlund Bjorn, 2007, 2007 European Conference on Power Electronics and Applications, P1, DOI 10.1109/EPE.2007.4417564

[5]

[陈政宇 Chen Zhengyu], 2016, [中国电机工程学报, Proceedings of the Chinese Society of Electrical Engineering], V36, P317

[6]

Didier C., 2010, U. S. Patent, Patent No. [2010/ 0270584 A1, 20100270584]

[7]

Engelmann G, 2015, INT C POWER ELECT DR, P112, DOI 10.1109/PEDS.2015.7203496

[8] 6 kV 5 kA RCGCT with advanced gate drive unit [J].

Gruening, H ;

Tsuchiya, T ;

Satoh, K ;

Yamaguchi, Y ;

Mizohata, F ;

Takao, K .

ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, :133-136

[9]

Gruening H., 2004, P IEEE INT S POW SEM, P336

[10]

Gruening H., 2005, P EUR C POW EL APPL, pP 1

← 1 2 →