Laser emitters (λ=808 nm) based on AlGaAs/GaAs heterostructures

AlGaAs/GaAs laser heterostructures with various active-region geometries, namely, with broadened asymmetric and narrow symmetric waveguides, and with various depths of quantum wells, are obtained by MOC hydride epitaxy. Single laser elements, bars, and arrays of laser diodes are fabricated from these samples, and their output characteristics are investigated. It is shown that the geometry of the narrow-waveguide structure is more preferable for laser-diode bars (lambda = 808 nm). Increasing the charge-carrier barrier also favorably affects the output parameters of the bars in the case of heterostructures with a narrow symmetric waveguide, and the slope of the power-current (P-I) characteristics for these structures increases from 0.9 W/A to 1.05 W/A. The laser diode array of 5 x 5 mm, which is assembled based on the best heterostructure, shows an output power above 1500 W in the quasi-continuous mode at a pump current of 150 A.