Improved field emission property of graphene by laser irradiation

被引：18

作者：

Cai, Wenbo ^{[1
]}

Zeng, Baoqing ^{[1
,2
]}

Liu, Jianlong ^{[1
]}

Guo, Jing ^{[1
]}

Li, Nannan ^{[1
]}

Chen, Lei ^{[1
]}

Chen, Hongwei ^{[3
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Phys Elect, Natl Key Lab Sci & Technol Vacuum Elect, Chengdu 610054, Peoples R China

[2] Univ Elect Sci & Technol China, Zhongshan Inst, Dept Elect Engn, Zhongshan 528402, Peoples R China

[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2013年 / 284卷

关键词：

Graphene oxide; Field emission; Laser irradiation; SINGLE-LAYER GRAPHENE; ELECTROPHORETIC DEPOSITION; CARBON NANOTUBES; FILMS; OXIDE; TRANSPARENT;

D O I：

10.1016/j.apsusc.2013.07.042

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Graphene oxide (GO) can be reduced to graphene by either laser irradiation or thermal annealing. To improve the field emission (FE) property, a pulse CO2 laser has been employed to irradiate GO films prepared by electrophoretic deposition (EPD). By varying the laser irradiation time, we were able to fabricate emitters with varied field enhancement factor. It has been found that the FE properties of laser irradiated films with optimized time 15 s were better than that of thermal annealed samples. The turn-on field (E-to) at 0.01 mA/cm(2) was reduced from 3.4 to 2.4 V/mu m, and the threshold field (E-th) at 1 mA/cm(2) was reduced from 6.8 to 5.1 V/mu m. Scanning electron microscopy (SEM) was taken to reveal the change of morphology after laser ablation, and it shows that the laser irradiation made great deal of graphene edges vertical to the substrate, which remarkably enhanced the FE properties. This kind of effective and convenience method made the graphene films as a potential field emitter for vacuum microelectronic devices. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：113 / 117

页数：5