Structural difference between near interface oxides grown on Si and C faces of 4H-SiC characterized by infrared spectroscopy

被引：30

作者：

Hirai, Hirohisa ^{[1
]}

Kita, Koji ^{[1
,2
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Japan Sci & Technol Agcy JST, PRESTO, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 13期

关键词：

RAY PHOTOELECTRON-SPECTROSCOPY; FILM THICKNESS; SILICON; SURFACES; SIO2-FILMS; SPECTRA; BULK;

D O I：

10.1063/1.4823468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal oxides on 4H-SiC (0001) (Si-face) and (000 (1) over bar) (C-face) grown at 1100 degrees C were characterized by Fourier transform infrared spectroscopy attenuated total reflection method. For the films thicker than 5 nm on both faces, the structure of oxide was almost the same as that of the thermal oxide on silicon irrespective of film thickness. For the films thinner than 3 nm, structural transition regions were observed near the interface on both faces, and structural difference was also clearly detected between the oxides in those transition regions on (0001) and on (000 (1) over bar) faces. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 43 条

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