Surface photovoltage analyses of Cu(In,Ga)S2/CdS and Cu(In,Ga)S2/In2S3 photovoltaic junctions

被引：7

作者：

Merdes, S. ^{[1
]}

Osterloh, F. ^{[2
]}

Saez-Araoz, R. ^{[3
]}

Klaer, J. ^{[3
]}

Klenk, R. ^{[3
]}

Dittrich, T. ^{[3
]}

机构：

[1] Helmholtz Zentrum Berlin, Competence Ctr Thin Film & Nanotechnol Photovolta, D-12489 Berlin, Germany

[2] Univ Calif Davis, Dept Chem, Davis, CA 95616 USA

[3] Helmholtz Zentrum Berlin, Inst Heterogeneous Mat Syst, D-14109 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 21期

关键词：

SOLAR-CELLS; ELECTRONIC-PROPERTIES; EFFICIENCIES; TRANSPORT; LAYERS; CU;

D O I：

10.1063/1.4807889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectrally dependent surface photovoltage measurements were performed with repetitive regime on Cu(In,Ga)S-2 absorbers and on Cu(In,Ga)S-2/CdS and Cu(In,Ga)S-2/In2S3 junctions. The results are correlated to current-voltage investigations of the respective completed solar cells. The measurements show the presence of a space charge region in the bare Cu(In,Ga)S-2 absorbers due to a high density of surface states. It is found that deposition of CdS increases the band bending whereas deposition of In2S3 does not change it. (C) 2013 AIP Publishing LLC.

引用

页数：3

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