Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

被引：35

作者：

Fukata, N. ^{[1
,4
]}

Mitome, M. ^{[1
]}

Bando, Y. ^{[1
]}

Seoka, M. ^{[2
]}

Matsushita, S. ^{[2
]}

Murakami, K. ^{[2
]}

Chen, J. ^{[3
]}

Sekiguchi, T. ^{[3
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[3] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[4] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 20期

基金：

日本科学技术振兴机构;

关键词：

boron; elemental semiconductors; laser ablation; nanotechnology; nanowires; phosphorus; semiconductor doping; silicon; vibrational modes;

D O I：

10.1063/1.3033226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Codoping of boron (B) and phosphorus (P) atoms was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. The observation of a local vibrational mode of B clearly showed B doping in codoped SiNWs, while Fano broadening due to heavy B doping disappeared, indicating compensation by P donors. The electrospin resonance signal of conduction electrons also disappeared due to compensation by B acceptors. These results indicate that codoping of B and P atoms was achieved in SiNWs during laser ablation.

引用

页数：3

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