Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

被引：35
|
作者：
Fukata, N. [1 ,4 ]
Mitome, M. [1 ]
Bando, Y. [1 ]
Seoka, M. [2 ]
Matsushita, S. [2 ]
Murakami, K. [2 ]
Chen, J. [3 ]
Sekiguchi, T. [3 ]
机构：
[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan
[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[3] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan
[4] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 20期
基金：
日本科学技术振兴机构;
关键词：
boron; elemental semiconductors; laser ablation; nanotechnology; nanowires; phosphorus; semiconductor doping; silicon; vibrational modes;
D O I：
10.1063/1.3033226
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Codoping of boron (B) and phosphorus (P) atoms was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. The observation of a local vibrational mode of B clearly showed B doping in codoped SiNWs, while Fano broadening due to heavy B doping disappeared, indicating compensation by P donors. The electrospin resonance signal of conduction electrons also disappeared due to compensation by B acceptors. These results indicate that codoping of B and P atoms was achieved in SiNWs during laser ablation.
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页数：3
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