Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

被引：35

作者：

Fukata, N. ^{[1
,4
]}

Mitome, M. ^{[1
]}

Bando, Y. ^{[1
]}

Seoka, M. ^{[2
]}

Matsushita, S. ^{[2
]}

Murakami, K. ^{[2
]}

Chen, J. ^{[3
]}

Sekiguchi, T. ^{[3
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[3] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[4] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 20期

基金：

日本科学技术振兴机构;

关键词：

boron; elemental semiconductors; laser ablation; nanotechnology; nanowires; phosphorus; semiconductor doping; silicon; vibrational modes;

D O I：

10.1063/1.3033226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Codoping of boron (B) and phosphorus (P) atoms was performed during the synthesis of silicon nanowires (SiNWs) by laser ablation. The observation of a local vibrational mode of B clearly showed B doping in codoped SiNWs, while Fano broadening due to heavy B doping disappeared, indicating compensation by P donors. The electrospin resonance signal of conduction electrons also disappeared due to compensation by B acceptors. These results indicate that codoping of B and P atoms was achieved in SiNWs during laser ablation.

引用

页数：3

共 50 条

[1] Phonon confinement in silicon nanowires synthesized by laser ablation
Fukata, N
Oshima, T
Okada, N
Kizuka, T
Tsurui, T
Ito, S
Murakami, K
PHYSICA B-CONDENSED MATTER, 2006, 376 : 864 - 867
[2] Phonon confinement and impurity doping in silicon nanowires synthesized by laser ablation
Fukata, N.
Oshima, T.
Okada, N.
Matsushita, S.
Tsurui, T.
Chen, J.
Sekiguchi, T.
Murakami, K.
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, 2008, 131-133 : 553 - +
[3] Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation
Fukata, N.
Matsushita, S.
Tsurui, T.
Chen, J.
Sekiguchi, T.
Uchida, N.
Murakami, K.
PHYSICA B-CONDENSED MATTER, 2007, 401 : 523 - 526
[4] Growth of crystalline boron nanowires by pulsed laser ablation
Yoon, Jong-Won
Shim, Kwang Bo
JOURNAL OF CERAMIC PROCESSING RESEARCH, 2011, 12 (02): : 199 - 201
[5] Effect of Boron Codoping and Phosphorus Concentration on Phosphorus Diffusion Gettering
Sieu Pheng Phang
Macdonald, Daniel
IEEE JOURNAL OF PHOTOVOLTAICS, 2014, 4 (01): : 64 - 69
[6] Light-Induced-Degradation effects in boron-phosphorus compensated n-type Czochralski silicon
Schutz-Kuchly, T.
Veirman, J.
Dubois, S.
Heslinga, D. R.
APPLIED PHYSICS LETTERS, 2010, 96 (09)
[7] Redistribution of phosphorus implanted into silicon doped heavily with boron
E. G. Tishkovskii
V. I. Obodnikov
A. A. Taskin
K. V. Feklistov
V. G. Seryapin
Semiconductors, 2000, 34 : 629 - 633
[8] Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals
Zhou, Shu
Pi, Xiaodong
Ni, Zhenyi
Luan, Qingbin
Jiang, Yingying
Jin, Chuanhong
Nozaki, Tomohiro
Yang, Deren
PARTICLE & PARTICLE SYSTEMS CHARACTERIZATION, 2015, 32 (02) : 213 - 221
[9] Boron-carbon-nitrogen films synthesized by laser ablation under ion beam bombardment
Ren, ZM
Du, YC
Ying, ZF
Li, FM
Lin, J
Ren, YZ
Zong, XF
MATERIALS CHEMISTRY AND PHYSICS, 1997, 50 (01) : 98 - 101
[10] Advances in Laser Ablation Synthesized Silicon-Based Nanomaterials for the Prevention of Bacterial Infection
Martinez-Carmona, Marina
Vallet-Regi, Maria
NANOMATERIALS, 2020, 10 (08) : 1 - 18

← 1 2 3 4 5 →