Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications - art. no. 61210D

GaN/AlGaN transistors are being developed for a variety of RF electronic devices that will eventually replace GaAs- and silicon-based devices for commercial and military applications. In this paper, we present results from the optimization of the growth conditions for GaN/AlGaN HEMT structures. The HEMT epitaxial layers are grown via MOCVD. We demonstrate that the key to high quality HEMT structures is the ability to grow uniform AlGaN layers. Details of the structural, electrical and optical characteristics of the HEMT epitaxial layers are presented. In addition, we present results on an innovative ICP etching used for HEMT fabrication. This technique allows for low damage device processing and improved reliability.