Band alignment at metal/organic and metal/oxide/organic interfaces

被引：60

作者：

Helander, M. G. ^{[1
]}

Wang, Z. B. ^{[1
]}

Qiu, J. ^{[1
]}

Lu, Z. H. ^{[1
]}

机构：

[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 19期

基金：

加拿大自然科学与工程研究理事会;

关键词：

band structure; charge injection; MIS structures; organic semiconductors; Schottky barriers; semiconductor-metal boundaries;

D O I：

10.1063/1.3030979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge injection at metal/organic interfaces dictates the performance, lifetime, and stability of organic electronic devices. We demonstrate that interface dipole theory, originally developed to describe Schottky contacts at metal/semiconductor interfaces, can also accurately describe the injection barriers in real organic electronic devices. It is found that theoretically predicted hole injection barriers for various archetype metal/organic and metal/oxide/organic structures are in excellent agreement with values extracted from experimental transport measurements. Injection barriers at metal/organic and metal/oxide/organic interfaces can therefore be accurately predicted based on the knowledge of only a few fundamental material properties of the oxide and organic layers.

引用

页数：3

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