Band alignment at metal/organic and metal/oxide/organic interfaces

被引:58
|
作者
Helander, M. G. [1 ]
Wang, Z. B. [1 ]
Qiu, J. [1 ]
Lu, Z. H. [1 ]
机构
[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
band structure; charge injection; MIS structures; organic semiconductors; Schottky barriers; semiconductor-metal boundaries;
D O I
10.1063/1.3030979
中图分类号
O59 [应用物理学];
学科分类号
摘要
Charge injection at metal/organic interfaces dictates the performance, lifetime, and stability of organic electronic devices. We demonstrate that interface dipole theory, originally developed to describe Schottky contacts at metal/semiconductor interfaces, can also accurately describe the injection barriers in real organic electronic devices. It is found that theoretically predicted hole injection barriers for various archetype metal/organic and metal/oxide/organic structures are in excellent agreement with values extracted from experimental transport measurements. Injection barriers at metal/organic and metal/oxide/organic interfaces can therefore be accurately predicted based on the knowledge of only a few fundamental material properties of the oxide and organic layers.
引用
收藏
页数:3
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